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this is information on a product in full production. march 2012 doc id 022753 rev 2 1/14 14 STB30NF20L n-channel 200 v, 0.065 , 30 a stripfet? power mosfet in d 2 pak package datasheet ? production data features gate charge minimized 100% avalanche tested excellent figure of merit (r ds * q g ) very good manufacturing repeatability very low intrinsic capacitance applications automotive description this n-channel enhancement mode power mosfet benefits from the latest refinement of stmicroelectronics? unique ?single feature size? strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. the result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. figure 1. internal schematic diagram order code v dss r ds(on) i d p tot STB30NF20L 200 v 0.075 30 a 150 w 1 3 d2pak tab !-v $4!" ' 3 table 1. device summary order code marking package packaging STB30NF20L 30nf20l d2pak tape and reel www.st.com
contents STB30NF20L 2/14 doc id 022753 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB30NF20L electrical ratings doc id 022753 rev 2 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 200 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 30 a i d drain current (continuous) at t c =100 c 19 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 120 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c dv/dt (2) 2. i sd 30a, di/dt 200a/s, v dd = 80%v (br)dss. peak diode recovery voltage slope 10 v/ns t j t stg operating junction temperature storage temperature -55 to 175 c t l maximum lead temperature for soldering purpose 300 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case max. 1 c/w r thja thermal resistance junction-ambient max. 62.5 c/w table 4. avalanche data symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by tjmax) 30 a e as single pulse avalanche energy (starting tj=25 c, i d =i ar , v dd =50 v) 140 mj
electrical characteristics STB30NF20L 4/14 doc id 022753 rev 2 2 electrical characteristics (t case =25c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = 200 v, v ds = 200 v, tc=125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 123v r ds(on) static drain-source on resistance v gs = 5 v, i d = 15 a 0.065 0.075 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 1990 297 42 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =160 v, i d = 30 a v gs =10 v (see figure 14) - 65 7 21 - nc nc nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r tu r n - o n d e l ay t i m e rise time v dd =100 v, i d =15 a, r g =4.7 , v gs =10 v (see figure 13) - 14 12 - ns ns t d(off) t f turn-off delay time fall time v dd =100 v, i d =15 a, r g =4.7 , v gs =10 v (see figure 13) - 68 14 - ns ns
STB30NF20L electrical characteristics doc id 022753 rev 2 5/14 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) v sd =1.5 v - 30 120 a a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =30 a, v gs =0 -1.5v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =30 a, di/dt = 100 a/s, v dd =100 v - 140 750 13 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =30 a, di/dt = 100 a/s, v dd =100 v, tj=150 c - 170 1.1 14 ns c a
electrical characteristics STB30NF20L 6/14 doc id 022753 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am112 3 2v1 i d 60 40 20 0 0 10 v d s (v) 20 (a) 5 15 8 0 3 v 4v 5v v g s =10v 10 3 0 50 70 am112 33 v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 8 0 10 3 0 50 70 v d s =20v am112 3 4v1 bv d ss -100 0 t j (c) (norm) -50 100 50 150 0 0.2 0.4 0.6 0. 8 1.0 i d =1ma am112 3 5v1 r d s (on) 0.070 0.06 8 0.066 0.064 0 20 i d (a) ( ) 10 3 0 0.072 v g s =5v 515 25 am112 3 6v1
STB30NF20L electrical characteristics doc id 022753 rev 2 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 q g (nc) (v) 60 8 20 40 10 v dd =160v i d = 3 0a 12 60 40 20 0 8 0 100 v d s v g s 100 100 100 v g s am112 3 7v1 c 1000 100 10 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am112 38 v1 v g s (th) 0. 8 0.6 0.4 0.2 -100 0 t j (c) (norm) -50 1.0 50 100 150 1.2 i d =250 a am112 3 9v1 r d s (on) 2.0 1.5 1.0 0.5 -100 0 t j (c) (norm) -50 100 50 150 2.5 0 am11240v1 v s d 0 10 i s d (a) (v) 5 15 20 0.4 0.5 0.6 0.7 0. 8 0.9 t j =25c t j =175c t j =-50c am11241v1
test circuit STB30NF20L 8/14 doc id 022753 rev 2 3 test circuit figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STB30NF20L package mechanical data doc id 022753 rev 2 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB30NF20L 10/14 doc id 022753 rev 2 figure 19. d2pak (to-263) drawing figure 20. d2pak footprint (a) a. all dimensions are in millimeters. 0079457_ s 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
STB30NF20L packaging mechanical data doc id 022753 rev 2 11/14 5 packaging mechanical data table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data STB30NF20L 12/14 doc id 022753 rev 2 figure 21. tape figure 22. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STB30NF20L revision history doc id 022753 rev 2 13/14 6 revision history table 11. document revision history date revision changes 01-feb-2012 1 first release. 07-mar-2012 2 p tot in cover page and in ta bl e 2 has been updated. figure 2 , figure 6 , figure 10 and figure 11 have been updated.
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